Crystal engineering and physicochemical properties ofl-threoninium succinate (LTS) single crystal for frequency conversion applications

Allen Moses, S. E. and Ravi Kumar, S. M. and Hegde, Tejaswi Ashok (2020) Crystal engineering and physicochemical properties ofl-threoninium succinate (LTS) single crystal for frequency conversion applications. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 31.0 (23). pp. 21097-21107. ISSN 0957-4522

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Abstract

The synthesis and characterization of organic nonlinear optical active (NLO) single crystal ofl-threoninium succinate (LTS) were carried out in this work. LTS crystal was prepared by slow evaporation technique using deionized water as solvent in a period of 82 days and the obtained LTS crystal was subjected to such characterizations as single-crystal X-ray diffraction analysis, UV-Vis-NIR spectroscopy analysis, FT-IR spectrum analysis, thermal analysis, second harmonic generation, and surface quality analysis. The third-order nonlinear optical properties of the LTS crystal were estimated at 532 nm using semiconductor laser source. Then it was employed for Z-scan analyzer to sense the nonlinear refractive index (n(2)), absorption coefficient (beta), and third-order susceptibility (chi(3)). Through this analysis, this research calculated then(2) = 2.35 x 10(-15)(m(3)/W),beta = 1.3057 x 10(-8)(m/W), and chi(3) = 1.0571 x 10(-13)(esu) were determined. The obtained results exhibited an appropriate variation in optical limiting behavior of the LTS material which saturates at higher intensities with respect to input and output power. The laser damaged threshold (LDT) technique enables the great resistivity toward optical high energy and it is found to be 52.7 mJ.

Item Type: Article
Subjects: Engineering > Engineering
Material Science > Materials Science
Multi-Disciplinary Studies > Multidisciplinary
Physics and Astronomy > Physics
Divisions: Engineering and Technology > Aarupadai Veedu Institute of Technology, Chennai, India > Physics
Depositing User: Unnamed user with email techsupport@mosys.org
Last Modified: 06 Feb 2026 07:11
URI: https://ir.vmrfdu.edu.in/id/eprint/6907

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